Characterization And Preparation Of Piezoelectric Component With Working Conditions By Using RF-Magnetron Sputtering Process

In this study, piezoelectricity of lanthanum-modified and zirconium-modified lead titanate thin film was analysed. Microstructurc and cIectrical properties of films wcre evaluated by changing processing parameters of rf-magnetron sputtering such as working pressure, substrate temperature, electric field, and so on. As a result, deposition rate was decreased whcn substrate tempcraturc and deposition time incrcased. The microstructures of films wcre changed from fine to coarse grains as the temperature of substrate increased. The perovskitc structure of PLT films was started to appear over 540°C and 30 mtorr working pressure, and the perovskite structure of films was maintained even though the amount of lanthanum was varied from 0.05 to 0.2 mol. (100)--orientation was preferred in the crystal structure of films when Pt/Ti/(lOO) Si wafer was usecl as substrate. As the lanthanum concentration increased, E r, tan S , coercive field, and remnant polarization were increased. Center frequency of a SAW filter foriiied on the PLT film was 44.7MHz and the wave velocity was 268:2 rids.