Interdiffusion behaviors observation in TiN/ZrO N bilayer by XAS and ToF-SIMS

Abstract Interface behavior plays an important role in multilayer structure. The deep understanding of interface diffusion and reaction is necessary to improve the performance of device with multilayer structure. In the present work, we perform a detailed systematic study on interdiffusion and interaction between the TiN and ZrOxNy layers in the TiN/ZrOxNy bilayer system. A series of TiN/ZrOxNy bilayers with reverse deposition orders or with varied composition have been prepared by radio-frequency reactive magnetron sputtering. Synchrotron radiation x-ray absorption spectroscopy (XAS) and time of flight secondary ion mass spectrometry (ToF-SIMS) are both used to understand well interface diffusion behavior. The XAS results indicate that interaction and interdiffusion extent between TiN and ZrO2 (ZrOxNy) layers depend on deposition order of both layer. Herein the O atoms enter easily into the TiN layer by substituting the N atoms when the ZrO2 or ZrOxNy layer is deposited onto the TiN layer. No significant interaction between TiN and ZrN layers takes place in the TiN/ZrN sample. Both XAS results and ToF-SIMS depth profiles reveal that the interaction between TiN and ZrOxNy layers depends on the deposition order of the layers.