Inductively coupled plasma reactor and method thereof

PROBLEM TO BE SOLVED: To provide an inductive coupling high frequency plasma reactor, and a processing method of a semiconductor wafer. SOLUTION: An inductive coupling high frequency plasma reactor 10 is provided with a plasma source 16 having plural channels to which processing gas is separately supplied. A gas supply system 20 is provided with plural gas supply lines 34, 35, 36 each capable of separately supplying flow and gas composition to the plural channels in the plasma source 16. Each channel is surrouded by RF coils which are separately fed, so plasma density can be changed in each channel of the plasma source 16. During action, a material layer existing on a semiconductor wafer 28 is uniformly etched or applied by locally space- controlling plasma characterisitcs at each position in the whole body of the semiconductor wafer 28. COPYRIGHT: (C)1997,JPO