Semiconductor device and process for their preparation

The semiconductor device (100), comprising: a substrate (110) having a first region (102) and a second region (103); an insulating layer (140) disposed on the substrate (110); a first conductive layer (120) disposed in or on the insulating layer (140) in the first region (102), and a second conductive layer (130) (in or on the insulating layer (140) in the second region 103) is arranged, wherein the first conductive layer (120) comprises a first conductive material and the second conductive layer (130) comprises a second conductive material and wherein the first conductive material is copper and the second conductive material is aluminum, wherein said first conductive layer (120) forming a landing pad for a bonding wire, and wherein a NiMoP-having metal layer (170) directly on the first conductive layer (120) but not on the second conductive layer (130) is arranged to stabilize the first conductive layer (120) mechanically so that they make contact with the bonding wire is, without damaging the underlying material arrangement.