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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel
Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel
2019
Yeonsu Jeong
Hye-Jin Jin
Ji Hoon Park
Yongjae Cho
Minju Kim
Sungjae Hong
William Jo
Yeonjin Yi
Seongil Im
Keywords:
Low voltage
Electron
barium strontium titanate
Optoelectronics
Materials science
Communication channel
Transistor
Inorganic chemistry
Ferroelectricity
Molybdenum disulfide
Correction
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