The growth of high-quality MCT films by MBE using in-situ ellipsometry

The ellipsometry and RHEED study or high-quality MCT films grown on (112)- and (130) CdTe and GaAs by MBE was carried out. The dependenee of the ellipsometric parameter ψ on MCT composition is evaluated. It was shown that such parameters as growth rate, the surfaxe roughness, initial substrate temperature, and film composition may be measured by the in-situ ellipsometry. The appearance of surface roughness was observed in the initial stage of MCT growth under various compositious (x CdTe =40+0.4). The further growth at optimum conditions leads to the smoothing of the surface and supplies us with high-quality MCT films