A High Speed Nanometric Electron Beam Lithography System

An electron beam lithography system has been developed for research and development of fine structure advanced devices. The system is capable of 0.1 um resolution, 0.04 um stitching accuracy, 0.04 um overlay accuracy and 1 wafer/hr throughput. One of key technologies used in this system is a variable gaussian optics and a pattern edging-process. This makes it possible to realize ten times higher throughput than the conventional fixed gaussian beam method and provide a simple means of proximity correction.