3D Rectification Effect on Plasmonic THz Detection by InP-Based Dual-Grating-Gate High-Electron-Mobility Transistor

We experimentally demonstrate that the photovoltaic responsivity in an InP-based dual-grating-gate HEMT plasmonic THz detector with the gate-readout configuration is significantly enhanced by a positive gate bias application due to the nonlinear rectification effect at the InGaAs/InAlAs heterobarrier.