Compositional transients in MOCVD grown III–V heterostructures

Abstract Compositional perturbations at GaAs/(GaAl)As and InP/(GaIn)As heterojunctions have been studied. Mechanisms associated with the gas handling apparatus are proposed to explain the effects seen in the GaAs/(GaAl)As structures and optimisation of the growth procedure has been undertaken to improve the electrical properties of (GaIn)As.