p-Diamond as a plasmonic material for terahertz applications

The gate-controlled hole gas at the hydrogenated diamond surface was predicted to have a plasmonic response to a terahertz and sub-terahertz electric field, making p-diamond field effect transistors (FETs) promising candidates for implementing room temperature plasmonic devices. The predicted performance of diamond plasmonic detectors shows their potential for high temperature, high voltage, and radiation hard applications and for THz communications and spectroscopy in the atmospheric windows from 0.2 to 0.6 THz. This makes p-diamond a unique material for Beyond 5G THz communications, since a resonant plasmonic response makes also possible the realization of p-diamond based emitters in sub-terahertz range, using strong current driven plasma instability in gated channels. Toward the optimal design of p-diamond plasmonic devices we simulated the response using hydrodynamic equations, Our fabrication process for obtaining higher mobility p-diamond plasmonic FETs will be presented.