Apparatus for plasma treatment and manufacturing method of semiconductor film using the same gas.

An apparatus plasma processing comprising within a sealable chamber (11): an internal structural body (8) which is arranged to be separated from one inner wall surface of the chamber (11) and forming an internal space for housing a substrate (1) serving as an object of processing; a section of the substrate (15) which is adapted to receive the substrate (1) within the internal space support; means reactant gas supply (10) for supplying a reactive gas to the internal space; a cathode (2) and an anode (4) which they are supported by the inner structural body (8) and arranged on both sides of the substrate (1) within the internal space and being adapted to generate in use a plasma discharge gas reagent; and a heater (24) which is supported by the inner structural body (8) and adapted to heat the substrate (1) within the internal space; characterized by a pipe (7) passing cooled gas air is arranged to be in contact with the heater (24) and which is adapted to absorb Joule heat by a cooling gas being generated Joule heat in use plasma discharge between the cathode (2) and anode (4).