Impact of Optical Parameters on ArF Lithography at 100 nm Node

Impact of optical parameters on lithography performance have been studied by lithography simulation.The results are presented for the100nm node under annular illumination and quasar illumination.The results show that,under quasar illumination,the good lithography performance of dense line and semi-dense line can be reached if the wave front error of6nm rms,moving standard deviation of8nm,flare of2%,exposure latitude of7%and CD uniformity of can be controlled in the final system.