Direct atomic resolution imaging of dislocation core structures in a 300 kV stem

By employing the incoherent imaging technique of Z-contrast imaging in a 300kV STEM, the authors show that it is possible to provide directly interpretable, atomic resolution images of the sublattice in compound semiconductors. Using this approach, analysis of dislocations at an interface in the CdTe(001)/GaAs(001) system reveals unexpected core structures at Lomer dislocations.