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X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity
X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity
2020
G. Niu
Anni Zhang
Yiao Li
Huaiyuan Zhang
Andries J. Scholten
Marnix Willemsen
Ralf Pijper
L.F. Tiemeijer
Keywords:
Heterojunction bipolar transistor
Materials science
Optoelectronics
Linearity
X-parameters
Correction
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