Characteristics of ZnO quantum dots as charge-storage layer in MONOS-Type Nonvolatile Memory

MONOS-Type nonvolatile memory devices with quantum dots (QDs) as charge-storage layer (CSL) have been investigated for a long time to replace conventional polycrystalline silicon floating gate memory due to the advantages of smaller operating voltage, faster programming/erasing speed, smaller size, better endurance, and increased bit storage density. As the key part, different types of semiconductor quantum dots have been extensively studied, such as GeError! Reference source not found., SiCError! Reference source not found., SiGeError! Reference source not found., InP and ZnO. In this work, the effect of different sputtering thickness and post-deposition annealing (PDA) temperature on the forming size of ZnO QDs has been investigated. Compared with some chemical method [4,5], this preparation method of ZnO QDs would be simpler and compatible with traditional integrated circuit technology.