High yield of multiply charged silicon ions by a pulsed sputter Penning source

Abstract A low-duty pulsed sputter Penning source has been developed for the medical synchrotron facility (HIMAC) at NIRS. A source Si 4+ current of 0.6 emA has been stably obtained by bombarding a silicon single crystal with Ar. The yield of this source was improved by a factor of more than ten, compared with that of a dc source.