Reliable doping technique for WSe 2 by W:Ta co-sputtering process

The electrical and material properties of WSe 2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×10 13 cm −2 ) and good effective hole mobility (16.5cm 2 /Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-µm) were measured using TLM structures.