Sputtered TiW/Au Schottky barriers on GaAs

High quality stable Schottky barriers are required for GaAs diodes and MESFETS used in mixers and analog and digital ICs. The TiW/Au system has been shown to be quite stable on GaAs. TiW/Au Schottky barriers were deposited on bulk GaAs by rf diode and rf magnetron sputtering. In addition, Ti/W/Au Schottky barriers were deposited by rf magnetron sputtering and e‐beam deposition. Capacitance–voltage and current–voltage measurements, along with Auger analysis were done to determine diode quality. A marked improvement in barrier height and reverse bias characteristics (I–V) was obtained by utilizing magnetron sputtering and reducing deposition power. Free carrier profiles showed evidence of some damage, even at extremely low power levels.