ENHANCED CHARGE CARRIER SEPARATION BY POINT CONTACTS IN PASSIVATION LAYERS IN THIN FILM SOLAR CELLS BASED ON HIGH BAND GAP CHALCOPYRITES

Figure 1: Point contact model: The point contacts are embedded in an appropriate passivation layer which is deposited on top of the p-type chalcopyrite surface of the thin film heterojunction device (right). The new heterogeneously constructed passivation layer (red) covering completely the polycrystalline chalcopyrite surface is illustrated schematically on the left hand side. The passivation layer contains a periodic arrangement of point contacts (light blue), while the point contact diameter and the distances between the point contacts are in the range of the diffusion length of the photogenerated charge carriers in p-type chalcopyrite of 1-2 μm. ENHANCED CHARGE CARRIER SEPARATION BY POINT CONTACTS IN PASSIVATION LAYERS IN THIN FILM SOLAR CELLS BASED ON HIGH BAND GAP CHALCOPYRITES