A common-source amplifier based on single layer MoS 2

The integration circuits are exposing to meet fundamental limits induced by short channel effect Single layer molybdenum disulfide (MoS 2 ) is a promising channel material for field effect transistors (FETs) because the short channel effect is largely reduced. In this paper, a common-source amplifier based on single layer MoS 2 is reported, indicating that single layer MoS 2 is capable to amplify signals. The carrier mobility of the as-made MoS 2 FETs was reached to ∼2.84 cm 2 /V·s. Furthermore, the output voltage gain of the amplifier is ∼1.3, which can be used as a unify gain amplifier.