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Growth of GaN layer by UHV sputter-epitaxy method
Growth of GaN layer by UHV sputter-epitaxy method
2020
Naoki Fukuda
Masaki Iwamoto
Takuya Osada
A-i Mizuno
Ki Ando
Hiroyuki Shinoda
Nobuki Mutsukura
Keywords:
Materials science
Gallium nitride
Epitaxy
layer
Optoelectronics
Sputtering
Correction
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