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A Self-aligned Isolation-oxide Process Before Gate Formation for Enhanced Packing Density of Megabit DRAMs
A Self-aligned Isolation-oxide Process Before Gate Formation for Enhanced Packing Density of Megabit DRAMs
1989
Kuepper
Hasler
Roehl
Bolze
Diekmann
Mohr
Starflinger
Keywords:
Etching (microfabrication)
Dram
Sphere packing
random access memory
Optoelectronics
Capacitor
Materials science
Megabit
Oxide
Logic gate
Correction
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