ZnS:Eu thin film electroluminescent devices prepared by r.f. magnetron sputtering

Abstract ZnS:Eu electroluminescent devices with a single insulating layer were prepared by r.f. magnetron sputtering. It was found that the optimum concentration of europium dopant in the sputtering target is 0.94 mol.%. The luminance level of this device is much lower than that of ZnS:Mn devices at a dopant concentration of about 1.0 mol.%. X-ray diffraction study shows that the crystallinity of ZnS:Eu phosphor is inferior to that of ZnS:Mn phosphor, which is a reason for the poor luminous characteristics of ZnS:Eu devices.