Soft Oxide Breakdown impact on the functionality of a 40 nm SRAM memory

As CMOS technology continues to downscale to a deep submicron level (40 nm and beyond), Soft Oxide Breakdown (SBD) is becoming a real problem that could lead to a serious degradation in the performances and the functional operations of SoC. In this paper we study the SBD, using two models, and quantify its impact on the functionality of a 40 nm SRAM memory.