Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

As metal oxide thin film transistors (TFTs) are widely used in sensing, memory and display. How to improve the performance of TFTs has become a research hotspot. In the TFTs, the matching between the source/drain electrodes and semiconductor materials can affect the carrier transport, and then determine the device performance. Here, we study the effects of different electrode fabrication technologies (thermal evaporation and sputtering) on the TFTs performance. The contact resistance, channel resistance and electrical stability are compared and analyzed. The TFTs based on sputtering show lower contact resistance, lower channel resistance, higher mobility and better stability.