Method for depositing cadmium telluride film solar cell absorption layer

The invention discloses a method for depositing a cadmium telluride film solar cell absorption layer. A ternary composition CdSexTe1-x is utilized as a raw material. A close-space sublimation method is used for continuously depositing the CdSexTe1-x on a glass substrate with a TCO/CdS film by multiple times, wherein the x in the CdSexTe1-x satisfies a relation of 0<=x<=1. According to the method of the invention, a relatively small band gap of the solar cell absorption layer is obtained through controlling Se element content and technological temperature in the CdSexTe1-x, so that a cell absorption spectrum is expanded in an infrared direction and shortcircuit current of the battery is enlarged. Furthermore continuous gradual change of the absorption layer band gap is realized, thereby forming a V-shaped band gap and increasing a filling factor and an open-circuit voltage of the cell. Furthermore a multi-source evaporation method can reduce takt time and improve production power.