Oriented growth of Y1Ba2Cu3Ox thin films by dual ion beam sputtering

We report the deposition of crystalline as‐deposited ion beam sputtered Y1Ba2Cu3Ox thin films with orientations of (100), (001), and (110)/(103) and a method for controlling the orientation of the films. Films deposited on Al2O3 Yttria (9%) stabilized ZrO2 typically have a near random orientation, while the films on MgO show a high degree of orientation. In addition, post deposition heat treatments at 500 C were found to reduce the room temperature resisitivity significantly, although no superconducting material, maintaining a specular surface. RBS analysis shows a variation in the composition as a function of substrate position on the platen, which indicates a re‐sputtering mechanism due to highly energetic neutrals from the target surface.