sputtering using high density ceramic targets

The influence of SnO concentration in the target on the film characteristics was studied in order to make the useful database 2 for the device design when low discharge voltage sputtering method and a high density In O –SnO ceramic targets were used. 23 2 In the case of the films deposited on unheated substrate, X-ray diffraction profile showed amorphous structure. Minimum resistivity of 358 mV cm was obtained by In O film with mobility of 40.1 cm ( Vs ) and carrier density of 4.35Eq20 cm . 2 y1 y3 23 With the increase of SnO contents, resistivity of the films increased because of the decrease in both carrier density and mobility. 2 Whereas, the films deposited on heated substrates showed polycrystalline structure. Resistivity was reduced, ranging from 5 to 20 wt.% SnO , and minimum resistivity of 136 mV cm was obtained at 15 wt.% with mobility of 40.5 cm ( Vs ) and carrier 2 y1 2 density of 1.13Eq21 cm . Transmittance and reflectance of these films strongly depend on carrier density. y3