Laser-ablated resist via inspection

193 run excimer laser photo-ablation of kerf patterns offers a non-destructive Method of characterizing high-aspect-ratio vias in resist and polymer stacks, for process control and potential rework decisions. Current optical and SEM approaches, including tilt-stage, do not offer sufficient information as diameters approach 0.5 urn in 1 urn thick stacks. Unlike the double-exposed photo-cleave method described by Yang, et al, this technique sections isolated vias after developing, representing actual product structures. Tilt-stage SEN inspection is then used to observe the details of the contour, to assure complete opening and proper dimensions.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.