Synthesis of iron oxide films by reactive magnetron sputtering assisted by plasma emission monitoring

• FeO films were synthesized by pulsed-DC magnetron sputtering from metallic target. • The film oxidation was controlled with a plasma emission monitoring system. • Special attention was paid to the sample position relative to the target axis. • Structural features depend on the oxidation rate of the growing films. • FeO behaviors are tuned from hematite semiconductor to magnetite semimetal properties. A R T I C L E I N F O Keywords: FeO Reactive sputtering Plasma emission monitoring Hematite Magnetite A B S T R A C T Iron oxide films were synthesized by pulsed-DC magnetron sputtering from a metallic target in Ar and O 2 gas mixtures. Plasma emission monitoring was implemented to accurately control the metal-to-oxygen ratio in the coating through the chemical state of the iron target. The intensity of the Fe* emission line was maintained at a given value (setpoint) by regulating the introduced oxygen flow rate. In addition, the oxidation rate of the growing film was adjusted by controlling the oxidation-to-deposition rate ratio as a function of the position of the substrates relative to the magnetron axis. The iron oxide films were characterized by X-ray diffraction, UV-VIS spectrophotometry, electrical measurement and vibrating sample magnetometry. In addition to the crys-tallization of pure hematite and magnetite phases, both phases coexist in a transition domain for a short range of setpoint depending on the oxidation-to-deposition rate ratio. The electrical, optical and magnetic behaviors of the FeO x films suggest that the relative proportion of phases can be tailored in this range. The FeO x film behaviors can then be tuned from the hematite semiconductor properties to the semi-metallic magnetite properties .