3/sup rd/ generation of 1200 V IGBT modules

IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings capability to dissipate this power. With the 3/sup rd/ generation of 1200 V IGBT modules eupec presents a product line with up to 50% higher current density in the same housing. In addition to familiar housings a new standard, the EconoPACK+, is introduced. So far the manufacturers had to deal with a three dimensional trade off between ruggedness, switching losses and saturation losses. Combining two technologies Infineon Technologies (formerly Siemens Semiconductors (HL)) in cooperation with eupec Warstein has designed the IGBT/sup 3/ that incorporates the ruggedness of a chip with a planar cell design with the low saturation of a trench IGBT. A vertically optimized device structure lowers the saturation voltage again and what is more important, also reduces the dynamic losses. In connection with eupec's advanced packaging technology this leads to a higher power integration without a rise of system costs due to additional protection circuits. The performance of 3/sup rd/ generation IGBT modules is discussed and a new product range introduced.