Study of characteristics of CdSe thin film transistor

Cadmium selenide thin film transistors were fabricated using normal evaporation and sputtering technique in multiple pumpdown of vacuum systems. The device structure, materials of each layer and deposition conditions are depicted. Characteristics of CdSe TFTs were studied. The results indicate that stable CdSe TFTs with good characteristics can be obtained by use of simple vacuum deposition processes and adding indium thin layer in the insulator/semiconductor interface.