A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

This paper discusses a 5.5GHz fully integrated high-linearity Class A power amplifier based on 0.18μm SiGe BiCMOS technology. According to the post simulation results, the maximum output power can reach 24.18 dBm, and the PAE is 17.42% at P 1dB . The designed PA based on SiGe BiCMOS technology demonstrates a competive linearity performance compared with RF CMOS and GaAs when considering the factors of cost and process complexity. It can be used in 802.11a Wireless Local Area Network (WLAN) application.