Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

Abstract The influence of the temperature on Metal Gate/Al 2 O 3 /n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al 2 O 3 /InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al 2 O 3 interface. On the other side, the Al 2 O 3 /InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al 2 O 3 in terms of the spatial defect distribution.