Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta 2 O 5 capacitor record density of 17 fF/μm 2

A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta 2 O 5 /TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF/μm 2 capacitance. High-performance, breakdown voltages over 15 V and good linearity, C 1 = 76 ppm/V and C 2 = 63 ppm/V 2 at 100 kHz, make this capacitor an unique solution for analog and RF applications embedded in Cu BEOL.