Fabrication process for cross matrix-type magnetic random access memory

The invention provides a fabrication process for a cross matrix-type magnetic random access memory. The fabrication process comprises the following steps of forming a bottom electrode; forming a magnetic memory cell array at the top of the bottom electrode, in which multiple thin films for making magnetic tunnel junctions and a NP/M/PN structure or a PN/M/NP structure serially connected with the junctions are formed, NP is an NP junction, PN is a PN junction, and M is a metal layer; and forming a top electrode at the top of the magnetic memory cell array. In the cross matrix-type magnetic random access memory prepared according to the invention, a pair of serial-connected diodes of which polarity connection directions are opposite are used to substitute triodes to serve as current flow direction selectors in a magnetic memory unit, so that a complicated power supply circuit is changed to a simple cross type power supply mode. By the fabrication process, the production process of the magnetic random access memory (MRAM) is greatly simplified, the cost is reduced, and moreover, the integration of a memory chip can be greatly improved, particular for a perpendicular spin-transfer torque magnetic random access memory (pSTT-MRAM) product.