Observation of Ellipsometric Oscillations when Depositing SiOx Film on Si(100) Substrate Using an Electron Beam Deposition Method

We have observed ellipsometric oscillations when depositing SiOx film on Si(100) substrate using an electron beam deposition method. A period of these oscillations is calculated to be 5.3 A thick. From an investigation using a rough surface model in ellipsometry, it is considered that this SiOx film is deposited layer-by-layer. This ellipsometry oscillation, first reported in this letter, is applicable to noncrystalline films in which reflection high-energy electron diffraction (RHEED) oscillations are ineffective.