Single Event Transient Hardness of a New Complementary (npn $+$ pnp) SiGe HBT Technology on Thick-Film SOI

We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, while maintaining the total dose robustness associated with SiGe devices. Heavy-ion broad-beam data confirm a reduced single event upset (SEU) cross-section in a high-speed shift register circuit.