C4 EM and CPI Reliability Benefits and Process Challenges of FBEOL Integration Changes Implemented in Lead-free C4 Products

2015 
The introduction of low-k & ultra-low-k dielectrics, lead-free (Pb-free) solder interconnects or C4's, and organic flip-chip laminates for integrated circuits have led to some major reliability challenges for the semiconductor industry. These include C4 electromigration (EM) and mechanical failures induced with-in the Si chip due to chip-package interactions (CPI). In 32nm technology, certain novel design changes were evaluated in the last Cu wiring level and the Far Back End of Line levels (FBEOL) to strategically re-distribute the current more uniformly through the Pb-free C4 bumps and therefore improve the C4 EM capabilities of the technology. FBEOL process integration changes, such as increasing the thickness of the hard dielectric (SiNx & SiOx) and reducing the final via diameter, were also evaluated for reducing the mechanical stresses in the weaker BEOL levels and mitigating potential risks for mechanical failures within the Si chip. The supporting white-bump, C4 EM and electrical/mechanical modeli...
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    4
    References
    0
    Citations
    NaN
    KQI
    []