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Fabrication of Vertical Schottky Barrier Diodes on β-Ga 2 O 3 Substrates Prepared by Vertical Bridgman Method
Fabrication of Vertical Schottky Barrier Diodes on β-Ga 2 O 3 Substrates Prepared by Vertical Bridgman Method
2020
Chia-Hung Lin
Keigo Hoshikawa
Atsushi Kajikura
Quang Tu Thieu
Amutha Thangaraja
Yuki Uchida
Yuki Koishikawa
Fumio Otsuka
Shinya Watanabe
Kohei Sasaki
Akito Kuramata
Keywords:
Schottky barrier
Materials science
bridgman method
Diode
Fabrication
Optoelectronics
Correction
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