A method for processing a semiconductor substrate

A method of processing a semiconductor substrate (102), comprising the steps of: Providing the semiconductor substrate (102) having a first surface (104) and a second surface (106), wherein the second surface of the first surface is disposed opposite; Forming a contact surface (108) on the first surface; Thinning the semiconductor substrate from the second surface side so that a thinned semiconductor substrate is obtained with a second surface; after the thinning of the Halbleitersubtrats, attaching the semiconductor substrate (102) with the second surface of the thinned semiconductor substrate on a temperature stable substrate carrier (112); and Creating a solder deposit (114) on the contact surface after thinning the semiconductor substrate, wherein the semiconductor substrate is disposed on the carrier substrate.