Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization

The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated electrons at the SiO 2 /poly -Si interface. The high electric field causes impact ionization near the S/D, where the secondary electrons surmount the SiO 2 barrier and are trapped near the interface. The channel region near the S/D is inverted to p-type by the trapped electrons, and the effective channel length is reduced. The drain current increases with the stress time, particularly for short-channel devices.