Molecular dynamics simulations of CF3 etching of SiC

Abstract Molecular dynamics simulations were performed to investigate CF 3 continuously bombarding SiC surfaces with energies of 100, 150 and 200 eV at normal incidence and room temperature. The simulated results show that the etching rates of Si and C atoms increase linearly with the incident energy. The etch rate of Si atoms is much more than that of C atoms. A carbon-rich surface layer is observed which is in good agreement with experiments. Under bombarding by CF 3 , an F-containing reaction layer is formed through which Si and C atoms are removed. In reaction layer, SiF and CF species are dominant. The formation mechanisms of ejected products are discussed. In etching products, SiF 3 is dominant. It is found that etching of C atoms in SiC is controlled by physical sputtering, while etching of Si atoms in SiC is controlled by chemical sputtering.