Growth and characterization of (InSb)m(InP)n short period superlattices
1997
Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfaces.
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