Recuit pulsé de semiconducteurs par hyperfréquences. Etude de la répartition de la puissance dans l'échantillon

In recent previous papers we have shown the possibility to anneal implanted monocrystalline as well as polycrystalline silicon by using pulsed microwave energy. For high resistivity samples a simultaneous illumination of the treated surface is needed. A detailed computer simulation shows that using a special experimental bench almost the total power delivered by the microwave generator is absorbed into the silicon for a very large range of temperature. Besides, the adjustement stability of the apparatus as well as the annealing homogeneity have been examined Simulation sur ordinateur montrant qu'en utilisant un appareillage experimental special, on obtient une forte absorption de la puissance delivree par le generateur hyperfrequence pour une large gamme de temperatures de l'echantillon. Examen de la stabilite de reglage du montage et de l'homogeneite du recuit