Simulations of layer-by-layer sputtering during epitaxy

We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high‐energy electron diffraction (RHEED) measurements on Si, we observe ion‐induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal‐rate ion bombardment and growth, and a reversal of growth‐induced roughening by subsequent ion bombardment. Comparison between simulations and measurements indicate that a model of the ion/surface interaction characterized by the creation of mobile vacancies with minimal preferential sputtering is sufficient to simulate all the RHEED measurements.