Metal-insulator-metal capacitor on the die with partial vias

A metal-insulator-metal capacitor on the die will be described with partial vias. In one example, first and second current spreading layers are formed in a semiconductor die. The current distribution layers have busbars. First and second metal plates are formed in metal layers of the die between the current distribution layers. Full vias extend from a bus bar of the first polarity of the first current spreading layer to a first side of the second metal plate and a second side of the second metal plate opposite the first side of the metal plate to a bus bar of the first polarity of the second current spreading layer. Partial vias extending from the bus bar of the first polarity of the second current spreading layer and forming on the second side of the second metal plate.