Modeling of the effective mobility for polysilicon thin film transistor

In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found that at the linearity region, the effective mobility decreases with the drain bias increasing and increases with the grain size increasing. The simulation results are in a good agreement with the experimental data.