{Tc}-{delta} relations in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films: Effects of oxygen pressure during growth

The {Tc} dependence on oxygen content was measured for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films grown with a variety of techniques (solid phase epitaxy, laser ablation, off-axis sputtering, co-evaporation) at oxygen pressures p(O{sub 2}) ranging from 1.0 atm to 0.1 mTorr. Dissimilar dependences resulted for each film type, with {Tc} either increasing or decreasing for small increments in {delta} from maximum oxygen occupancy. Varying systematically with p(O{sub 2}) during growth, the deviations are attributed to competing effects from hole-doping lattice defects (most likely on the Y-site) on the carrier density of the CuO{sub 2} planes and basal plane oxygen capacity, respectively, giving rise to overdoping or underdoping after low temperature oxidation in 1.0 atm of oxygen.