Mirror for the EUV wavelength range the projection objective for microlithography with such a mirror and the projection exposure system for microlithography with a projection lens such

The invention relates to a mirror for the EUV wavelength range having a coating applied on a substrate layer arrangement, wherein the layer arrangement of a plurality of layer subsystems (P '', P '' '), which (each consisting of a periodic sequence of at least one period P The mirror being characterized in that the remote from the substrate layer furthest subsystem (P '' ') comprises a number N Further, the invention relates to a projection objective for microlithography with such a mirror or a projection exposure apparatus comprising such a projection lens.